Contacting area on germanium
AssigneeCommissariat A L'energie Atomique Et Aux Energies Alternatives
InventorsWilly Ludurczak, Abdelkader Aliane, Jean-Michel Hartmann, Zouhir Mehrez, Philippe Rodriguez
Life of this patent
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Abstract
A method of forming an opening in an insulating layer covering a semiconductor region including germanium, successively including: the forming of a first masking layer on the insulating layer; the forming on the first masking layer of a second masking layer including an opening; the etching of an opening in the first masking layer, in line with the opening of the second masking layer; the removal of the second masking layer by oxygen-based etching; and the forming of the opening of said insulating layer in line with the opening of the first masking layer, by fluorine-based etching.
Claims20
A method of forming an opening in an insulating layer covering a semiconductor region comprising germanium, successively comprising:
- a) forming a first masking layer on the insulating layer;
- b) forming on the first masking layer a second masking layer comprising an opening;
- c) etching an opening in the first masking layer, in line with the opening of the second masking layer;
- d) removing the second masking layer by oxygen-based etching;
- and
- e) forming the opening of said insulating layer in line with the opening of the first masking layer, by an etching where less than 5% of the reactive molecules used are oxygen molecules,
- wherein the insulating layer is located on and in contact with an additional semiconductor layer different from said semiconductor region, said additional semiconductor layer being made of silicon or having an atomic percentage of silicon greater than 70%, and said additional semiconductor layer covering said semiconductor region.
A method of forming a contacting area, successively comprising:
- a) forming a first masking layer on an insulating layer covering a semiconductor region comprising germanium;
- b) forming on the first masking layer a second masking layer comprising an opening;
- c) etching an opening in the first masking layer, in line with the opening of the second masking layer;
- d) removing the second masking layer by oxygen-based etching;
- and
- e) forming an opening of said insulating layer in line with the opening of the first masking layer, by an etching where less than 5% of the reactive molecules used are oxygen molecules,
- wherein the contacting area is an area of contact with said semiconductor region and comprises an intermetallic area, the intermetallic area comprises non-metal atoms, and more than 70% of the non-metal atoms are silicon.
A method of forming a contacting area, successively comprising:
- a) forming a first masking layer on an insulating layer covering a semiconductor region comprising germanium;
- b) forming on the first masking layer a second masking layer comprising an opening;
- c) etching an opening in the first masking layer, in line with the opening of the second masking layer;
- d) removing the second masking layer by oxygen-based etching;
- and
- e) forming an opening of said insulating layer in line with the opening of the first masking layer, by an etching where less than 5% of the reactive molecules used are oxygen molecules,
- wherein the contacting area comprises an intermetallic area formed by reacting a semiconductor with a metal region, and the first masking layer and the metal region comprise a same metal.
Dependencies are inferred from the claim text.