Apparatus and method for patterned processing

A method for patterning a solid sample, the method comprising:

• disposing a solid sample on a grounded sample holder of an apparatus for plasma processing;
• disposing a mask between the grounded sample holder and a plasma region of the apparatus for plasma processing, the mask having a first face, a second face, and at least one mask opening extending through the mask from the first face to the second face, the first face being oriented toward the plasma region and the second face being oriented toward a surface of the solid sample to be processed, the second face comprising an electrically insulating part in contact with the surface of the solid sample to be processed, the mask comprising at least one electrically conductive part on the first face and partially or fully covering the side walls of the at least one mask opening;
• injecting an input gas in the plasma region of the apparatus for plasma processing;
• applying an energy configured to excite the input gas and to generate a plasma in the plasma region;
• and
• applying a non-null direct-current bias voltage to the mask, the mask being disposed in contact with the surface of the solid sample to prevent plasma generation between the mask and the solid sample, said at least one mask opening being dimensioned and shaped to generate spatially selective patterned processing by selecting and focusing ions from the plasma on the surface of the solid sample.