Silicon on insulator semiconductor device with mixed doped regions

A semiconductor device, comprising:

• a semiconductor substrate comprising a first semiconductor material layer separated from a second semiconductor material layer by an insulating layer;
• a first well having a first doping type disposed in the second semiconductor material layer;
• a second well having a second doping type different than the first doping type disposed in the second semiconductor material layer, wherein the second well is a continuous well and is disposed in the first well, and wherein the first well is a continuous well that extends beneath the second well;
• a first gate electrode disposed over the first semiconductor material layer;
• a second gate electrode disposed over the first semiconductor material layer and spaced from the first gate electrode in a first direction;
• a pair of first source/drain regions disposed in the first semiconductor material layer and on opposite sides of a first portion of the first gate electrode, wherein the second well contacts the insulating layer directly below the first source/drain regions;
• a pair of second source/drain regions disposed in the first semiconductor material layer and on opposite sides of a second portion of the first gate electrode, wherein the second source/drain regions are spaced from the first source/drain regions in a second direction transverse the first direction, and wherein the first well contacts the insulating layer directly below the second source/drain regions;
• and
• a pair of third source/drain regions disposed in the first semiconductor material layer and on opposite sides of a first portion of the second gate electrode, wherein the third source/drain regions are spaced from both the first source/drain regions and the second source/drain regions in the first direction, and wherein the first well contacts the insulating layer directly below the third source/drain regions.

A semiconductor device, comprising:

• a semiconductor substrate comprising a first semiconductor material layer separated from a second semiconductor material layer by an insulating layer;
• a first doped region having a first doping type disposed in the second semiconductor material layer;
• a second doped region having a second doping type different than the first doping type disposed in the first doped region, wherein the second doped region is continuous, and wherein the first doped region is continuous and extends beneath the second doped region;
• a first gate electrode disposed over the first semiconductor material layer, wherein the first gate electrode extends laterally in a first direction, such that a first portion of the first gate electrode overlies a first portion of the second doped region and a second portion of the first gate electrode overlies a first portion of the first doped region;
• a second gate electrode disposed over the first semiconductor material layer and spaced from the first gate electrode in a second direction transverse the first direction, wherein the second gate electrode extends laterally in the first direction and in parallel with the first gate electrode, such that a first portion of the second gate electrode overlies a second portion of the second doped region and a second portion of the second gate electrode overlies a second portion of the first doped region;
• and
• an isolation gate disposed over the first semiconductor material layer and between the first gate electrode and the second gate electrode, wherein the isolation gate extends laterally in the first direction and in parallel with the second gate electrode, wherein a first portion of the isolation gate is disposed directly between the first portion of the first gate electrode and the second portion of the second gate electrode, wherein a second portion of the isolation gate is disposed directly between the second portion of the first gate electrode and the first portion of the second gate electrode, and wherein both the first portion of the isolation gate and the second portion of the isolation gate overlie a third portion of the second doped region.