Semiconductor structure

A semiconductor structure, comprising:

• a base;
• bit lines, located on the base, and a material of the bit line comprising a metal semiconductor compound;
• semiconductor channels, located on surfaces of the bit lines, along a direction that the base points to the bit line, the semiconductor channel comprising a first doped region, a channel region and a second doped region arranged in sequence, and the first doped region being in contact with the bit line;
• a first dielectric layer, covering sidewall surfaces of the first doped regions, and a first interval being provided between parts of the first dielectric layer covering sidewalls of adjacent first doped regions on a same bit line;
• an insulating layer, covering sidewall surfaces of the channel regions;
• word lines, covering a sidewall surface of the insulating layer away from the channel regions, and a second interval being provided between adjacent word lines;
• a second dielectric layer, covering sidewall surfaces of the second doped regions, and a third interval being provided between parts of the second dielectric layer located on sidewalls of adjacent second doped regions;
• and
• a third dielectric layer, located in the first intervals, the second intervals and the third intervals.