Forming semiconductor structures with two-dimensional materials
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsChao-Ching Cheng, Hung-Li Chiang, Chun-Chieh Lu, Ming-Yang Li, Tzu-Chiang Chen
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Abstract
A process is provided to fabricate a finFET device having a semiconductor layer of a two-dimensional “2D” semiconductor material. The semiconductor layer of the 2D semiconductor material is a thin film layer formed over a dielectric fin-shaped structure. The 2D semiconductor layer extends over at least three surfaces of the dielectric fin structure, e.g., the upper surface and two sidewall surfaces. A vertical protrusion metal structure, referred to as “metal fin structure”, is formed about an edge of the dielectric fin structure and is used as a seed to grow the 2D semiconductor material.
Claims20
A structure, comprising:
- a substrate;
- a first fin structure of a first material over the substrate;
- a first metal protrusion structure laterally in contact with an edge surface of the first fin structure along a first direction;
- and
- a semiconductor layer of a two-dimensional material on the first fin structure, the semiconductor layer being grown using the first metal protrusion structure as a seed.
A method, comprising:
- forming a first fin structure and a first metal protrusion structure over a substrate, the first metal protrusion in contact with an edge portion of the first fin structure in a first direction;
- and
- forming a semiconductor layer of a two-dimensional material on the first fin structure using the first metal protrusion structure as a seed.
A method, comprising:
- forming a vertical metal structure over a substrate;
- forming a dielectric fin structure over the substrate and laterally extending from the vertical metal structure along a first direction;
- forming a semiconductor layer of a two-dimensional material over the dielectric fin structure using the metal fin structure as a seed, the semiconductor layer covering at least two sidewalls of the dielectric fin structure along the first direction;
- and
- forming a gate structure over a first portion of the semiconductor layer.
Dependencies are inferred from the claim text.