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US 11,600,719 B2Granted
Bipolar junction device
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsZi-Ang Su, Ming-Shuan Li, Chih Chieh Yeh
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Abstract
The present disclosure provides embodiments of bipolar junction transistor (BJT) structures. A BJT according to the present disclosure includes a first epitaxial feature disposed over a well region, a second epitaxial feature disposed over the well region, a vertical stack of channel members each extending lengthwise between the first epitaxial feature and the second epitaxial feature, a gate structure wrapping around each of the vertical stack of channel members, a first electrode coupled to the well region, an emitter electrode disposed over and coupled to the first epitaxial feature, and a second electrode disposed over and coupled to the second epitaxial feature.
Claims20
A semiconductor structure, comprising:
- a first epitaxial feature and a second epitaxial feature disposed over a first well region;
- a third epitaxial feature and a fourth epitaxial feature disposed over a second well region;
- a gate structure disposed between the first epitaxial feature and the second epitaxial feature and between the third epitaxial feature and the fourth epitaxial feature;
- a first electrode coupled to the first well region;
- a second electrode coupled to the second well region;
- a common emitter electrode disposed over and coupled to the first epitaxial feature and the third epitaxial feature;
- and
- a third electrode disposed over and coupled to the second epitaxial feature and the fourth epitaxial feature,
- wherein the first epitaxial feature, the second epitaxial feature, the third epitaxial feature, and the fourth epitaxial feature comprise silicon and an n-type dopant,
- wherein the first well region and the second well region comprise a p-type dopant,
- wherein the first electrode and the second electrode are coupled to a base electrode, and
- wherein the third electrode comprises a collector electrode.
9 more elements
A semiconductor structure, comprising:
- a first n-type epitaxial feature and a second n-type epitaxial feature disposed over a first p-type well region;
- first channel members extending between the first n-type epitaxial feature and the second n-type epitaxial feature;
- a third n-type epitaxial feature and a fourth n-type epitaxial feature disposed over a second p-type well region;
- second channel members extending between the third n-type epitaxial feature and the fourth n-type epitaxial feature;
- a gate structure extending between the first n-type epitaxial feature and the second n-type epitaxial feature and between the third n-type epitaxial feature and the fourth n-type epitaxial feature;
- a first electrode coupled to the first p-type well region;
- a second electrode coupled to the second p-type well region;
- a common emitter electrode coupled to the first n-type epitaxial feature and the third n-type epitaxial feature;
- and
- a third electrode coupled to the second n-type epitaxial feature and the fourth n-type epitaxial feature,
- wherein the first electrode and the second electrode are coupled to a base electrode, and
- wherein the third electrode comprises a collector electrode.
9 more elements
A semiconductor structure, comprising:
- a first n-type epitaxial feature and a second n-type epitaxial feature disposed over a first p-type well region;
- first channel members extending between the first n-type epitaxial feature and the second n-type epitaxial feature along a first direction;
- a third n-type epitaxial feature and a fourth n-type epitaxial feature disposed over a second p-type well region;
- second channel members extending between the third n-type epitaxial feature and the fourth n-type epitaxial feature along the first direction;
- a gate structure extending lengthwise along a second direction perpendicular to the first direction and extending between the first n-type epitaxial feature and the second n-type epitaxial feature and between the third n-type epitaxial feature and the fourth n-type epitaxial feature;
- a first electrode coupled to the first p-type well region and extending lengthwise along the first direction;
- a second electrode coupled to the second p-type well region and extending lengthwise along the first direction;
- a common emitter electrode extending lengthwise along the second direction and coupled to the first n-type epitaxial feature and the third n-type epitaxial feature;
- and
- a third electrode extending lengthwise along the lengthwise along the second direction and coupled to the second n-type epitaxial feature and the fourth n-type epitaxial feature,
- wherein the first electrode and the second electrode are coupled to a base electrode, and
- wherein the third electrode comprises a collector electrode.
9 more elements
Dependencies are inferred from the claim text.