Multi-layer dielectric refill for profile control in semiconductor devices
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsYa-Yi Tsai, Chi-Hsiang Chang, Shih-Yao Lin, Tzu-Chung Wang, Shu-Yuan Ku
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Abstract
A semiconductor device and method of fabricating a semiconductor device involves formation of a trench above a fin (e.g. a fin of a FinFET device) of the semiconductor device and formation of a multi-layer dielectric structure within the trench. The profile of the multi-layer dielectric structure can be controlled depending on the application to reduce shadowing effects and reduce cut failure risk, among other possible benefits. The multi-layer dielectric structure can include two layers, three layers, or any number of layers and can have a stepped profile, a linear profile, or any other type of profile.
Claims20
A semiconductor device comprising:
- an isolation structure;
- a fin extending above the isolation structure;
- a dielectric structure formed above the fin, the dielectric structure comprising both a first dielectric layer and a second dielectric layer;
- and
- a gate formed over the isolation structure, over the fin, and adjacent the dielectric structure;
- wherein the dielectric structure further comprises a third dielectric layer formed adjacent the second dielectric layer;
- wherein a width of a bottom region of the dielectric structure closest to the fin is greater than a width of a top region of the dielectric structure disposed above the bottom region, and wherein a width of the dielectric structure is less than a width of the fin.
A semiconductor device comprising:
- an isolation structure;
- a fin extending above the isolation structure;
- a dielectric structure formed above the fin, the dielectric structure comprising both a first dielectric layer and a second dielectric layer;
- and
- a gate formed over the isolation structure, over the fin, and adjacent the dielectric structure;
- wherein the dielectric structure further comprises a third dielectric layer formed adjacent the second dielectric layer;
- wherein a width of a bottom region of the dielectric structure closest to the fin is greater than a width of a middle region of the dielectric structure disposed above the bottom region, and wherein the width of the middle region of the dielectric structure disposed above the bottom region is greater than a width of a top region of the dielectric structure disposed above the middle region.
A method of fabricating a semiconductor device, the method comprising:
- forming a trench above a fin of the semiconductor device;
- forming a dielectric structure within the trench by forming both a first dielectric layer within the trench and a second dielectric layer within the trench;
- and
- removing a portion of the first dielectric layer to control a profile of the dielectric structure.
A method of fabricating a semiconductor device, the method comprising:
- forming a trench above a fin of the semiconductor device;
- forming a dielectric structure within the trench by forming a first dielectric layer within the trench, forming a second dielectric layer within the trench, and forming a third dielectric layer within the trench;
- and
- removing a portion of the first dielectric layer to control a profile of the dielectric structure.
Dependencies are inferred from the claim text.