Method for forming semiconductor structure with contact over source/drain structure
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsAndrew Joseph Kelly, Yusuke Oniki
Life of this patent
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Abstract
Methods for manufacturing semiconductor structures are provided. The method for manufacturing the semiconductor structure includes forming a fin structure protruding from a substrate and forming a source/drain structure over the fin structure. The method for manufacturing a semiconductor structure further includes forming a metallic layer over the source/drain structure and forming an oxide film on a sidewall of the source/drain structure. In addition, the oxide film and the metallic layer are both in direct contact with the source/drain structure.
Claims20
A method for manufacturing a semiconductor structure, comprising:
- forming a fin structure protruding from a substrate;
- forming a source/drain structure over the fin structure;
- forming a metallic layer over the source/drain structure;
- forming an oxide film on a sidewall of the source/drain structure, wherein the oxide film and the metallic layer are both in direct contact with the source/drain structure;
- and
- forming a contact covering the metallic layer and the source/drain structure, wherein a bottom surface of the contact is lower than a bottom surface of the metallic layer.
A method for manufacturing a semiconductor structure, comprising:
- forming a fin structure protruding from a substrate;
- forming a gate structure across the fin structure;
- forming a source/drain structure over the fin structure adjacent to the gate structure;
- forming a metallic layer over the source/drain structure;
- forming an oxide film on a sidewall of the source/drain structure after forming the metallic layer;
- and
- removing the oxide film to form a dent in the source/drain structure over the fin structure.
A method for manufacturing a semiconductor structure, comprising:
- forming a fin structure protruding from a substrate;
- forming an insulating layer around the fin structure;
- forming a source/drain structure over the fin structure;
- forming an interlayer dielectric layer over the substrate;
- forming an opening exposing the source/drain structure;
- forming a metallic layer over the source/drain structure;
- forming a first oxide film on a sidewall of the source/drain structure and a second oxide film covering a top surface of the metallic layer;
- removing the first oxide film and the second oxide film to expose the sidewall of the source/drain structure and the top surface of the metallic layer;
- and
- forming a contact over the metallic layer.
Dependencies are inferred from the claim text.