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US 11,600,714 B2Granted
Manufacturing method of semiconductor device
AssigneeSK hynix Inc.
InventorJin Ha Kim
Life of this patent
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Abstract
A method of manufacturing a semiconductor device includes forming a stacked structure, forming an opening in the stacked structure, forming a preliminary channel layer in the opening, forming a channel layer by performing heat treatment on the preliminary channel layer, etching an inner surface of the channel layer, and performing ozone (O3) treatment on an etched inner surface of the channel layer.
Claims14
A method of manufacturing a semiconductor device, the method comprising:
- forming a stacked structure;
- forming an opening in the stacked structure;
- forming an amorphous silicon layer in the opening;
- forming a polysilicon layer by performing heat treatment on the amorphous silicon layer;
- etching an inner surface of the polysilicon layer using a wet etch process;
- permeating oxygen ions into a wet-etched inner surface of the polysilicon layer;
- and
- performing a cleaning process on the inner surface of the polysilicon layer into which the oxygen ions are permeated.
5 more elements
A method of manufacturing a semiconductor device, the method comprising:
- forming a stacked structure including first material layers and second material layers stacked alternately with each other;
- forming an opening passing through the stacked structure;
- forming a preliminary channel layer in the opening;
- forming a channel layer by performing heat treatment on the preliminary channel layer;
- etching an inner surface of the channel layer using a wet etch process to form a defect in the inner surface;
- and
- permeating oxygen ions into the wet-etched inner surface of the channel layer to cure the defect.
4 more elements
A method of manufacturing a semiconductor device, the method comprising:
- depositing an amorphous silicon layer on a dielectric layer;
- forming a polysilicon layer by performing heat treatment on the amorphous silicon layer;
- etching the polysilicon layer using a wet etch process to reduce a thickness of the polysilicon layer;
- and
- permeating oxygen ions into a wet-etched surface of the polysilicon layer.
2 more elements
Dependencies are inferred from the claim text.