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US 11,600,712 B2Granted
Ferroelectric structure including a ferroelectric film having a net polarization oriented to a polarization enhancement film and semiconductor device including the same
AssigneeSamsung Electronics Co., Ltd.
InventorsSanghyun Jo, Sangwook Kim, Yunseong Lee, Jinseong Heo
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Abstract
A ferroelectric structure includes a first polarization enhancement film on a ferroelectric film, wherein the ferroelectric film has a first net polarization in a first direction oriented from the ferroelectric film toward the first polarization enhancement film. The first polarization enhancement film has a second net polarization in a second direction crossing the first direction.
Claims15
A semiconductor device comprising:
- a substrate,
- the substrate including a first source/drain region and a second source/drain region in upper portions of the substrate, and
- the first source/drain region and the second source/drain region being spaced apart from each other;
- a ferroelectric film on a portion of the substrate between the first source/drain region and the second source/drain region,
- the ferroelectric film having a first net polarization in a first direction oriented from the ferroelectric film toward a first polarization enhancement film;
- the first polarization enhancement film on the ferroelectric film,
- the first polarization enhancement film having a second net polarization in a second direction crossing the first direction;
- and
- an electrode film directly on the first polarization enhancement film,
- wherein the first direction is substantially perpendicular to an interface between the ferroelectric film and the first polarization enhancement film, and
- wherein the second direction is substantially parallel to an interface between the ferroelectric film and the first polarization enhancement film,
- wherein the first polarization enhancement film includes at least one of In2Se3, MoS2, MoSe2, MoTe2, WS2, and WSe2.
9 more elements
A ferroelectric structure comprising:
- a first polarization enhancement film;
- an electrode film directly on the first polarization enhancement film;
- and
- a ferroelectric film having a first surface facing the first polarization enhancement film and a second surface opposite the first surface, wherein
- the ferroelectric film has a first net polarization in a first direction oriented from the ferroelectric film toward the first polarization enhancement film,
- the first polarization enhancement film has a second net polarization in a second direction crossing the first direction, and
- the second surface of the ferroelectric film does not directly contact a dielectric film,
- wherein the first direction is substantially perpendicular to an interface between the ferroelectric film and the first polarization enhancement film, and
- wherein the second direction is substantially parallel to an interface between the ferroelectric film and the first polarization enhancement film,
- wherein the first polarization enhancement film includes at least one of In2Se3, MoS2, MoSe2, MoTe2, WS2, and WSe2.
7 more elements
A semiconductor device, comprising:
- a first polarization enhancement film;
- an electrode film on the first polarization enhancement film;
- and
- a ferroelectric film having a first surface facing the first polarization enhancement film and a second surface opposite the first surface, wherein
- the ferroelectric film has a first net polarization in a first direction oriented from the ferroelectric film toward the first polarization enhancement film,
- the first polarization enhancement film has a second net polarization in a second direction crossing the first direction, and
- the second surface of the ferroelectric film does not directly contact a dielectric film,
- wherein the first direction is substantially perpendicular to an interface between the ferroelectric film and the first polarization enhancement film, and
- wherein the second direction is substantially parallel to an interface between the ferroelectric film and the first polarization enhancement film,
- wherein the first polarization enhancement film includes at least one of In2Se3, MoS2, MoSe2, MoTe2, WS2, and WSe2, wherein
- the semiconductor device does not include an insulating layer between the electrode film and the first polarization enhancement film.
8 more elements
Dependencies are inferred from the claim text.