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US 11,600,710 B2Granted
Semiconductor device having buried gate structure and method for fabricating the same
AssigneeSK hynix Inc.
InventorDong-Soo Kim
Life of this patent
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Abstract
Disclosed is a semiconductor device for improving a gate induced drain leakage and a method for fabricating the same, and the semiconductor device includes a substrate, a first doped region and a second doped region formed to be spaced apart from each other by a trench in the substrate, a first gate dielectric layer over the trench, a lower gate over the first gate dielectric layer, an upper gate over the lower gate and having a smaller width than the lower gate, and a second gate dielectric layer between the upper gate and the first gate dielectric layer.
Claims18
A method for fabricating a semiconductor device comprising:
- forming a trench in a substrate;
- forming a first gate dielectric layer over the trench;
- forming a lower gate over the first gate dielectric layer;
- forming a second gate dielectric layer covering the first gate dielectric layer;
- forming an upper gate over the second gate dielectric layer and the lower gate;
- and
- implanting a dipole inducing material into the second gate dielectric layer before the forming of the upper gate.
4 more elements
Dependencies are inferred from the claim text.