Germanium tin gate-all-around device
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsShahaji B. More, Cheng-Han Lee, Shih-Chieh Chang, Shih-Ya Lin, Chung-En Tsai, Chee-Wee Liu
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Abstract
The present disclosure describes a semiconductor device includes a substrate, a buffer layer on the substrate, and a stacked fin structure on the buffer layer. The buffer layer can include germanium, and the stacked fin structure can include a semiconductor layer with germanium and tin. The semiconductor device further includes a gate structure wrapped around a portion of the semiconductor layer and an epitaxial structure on the buffer layer and in contact with the semiconductor layer. The epitaxial structure includes germanium and tin.
Claims20
A semiconductor device, comprising:
- a substrate;
- a buffer layer on the substrate, wherein the buffer layer comprises germanium;
- a stacked fin structure on the buffer layer, wherein the stacked fin structure comprises a semiconductor layer comprising germanium and tin;
- a gate structure on a top surface of the buffer layer and wrapped around a portion of the semiconductor layer;
- and
- an epitaxial structure in physical contact with the buffer layer and the semiconductor layer, wherein the epitaxial structure comprises germanium and tin.
A semiconductor device, comprising:
- a substrate;
- a buffer layer on the substrate, wherein the buffer layer comprises germanium;
- first and second stacked fin structures on the buffer layer, wherein the first and second stacked fin structures comprise first and second plurality of semiconductor layers, respectively, and wherein each of the first and second plurality of semiconductor layers comprises germanium and tin;
- a first gate structure wrapped around a first portion of the first plurality of semiconductor layers and a second gate structure wrapped around a second portion of the second plurality of semiconductor layers;
- a first epitaxial structure on the buffer layer and in contact with the first plurality of semiconductor layers, wherein the first epitaxial structure comprises germanium, tin, and a first dopant;
- and
- a second epitaxial structure on the buffer layer and in contact with the second plurality of semiconductor layers, wherein the second epitaxial structure comprises germanium, tin, and a second dopant different from the first dopant.
A method, comprising:
- forming, on a substrate, a buffer layer comprising germanium;
- forming a stacked fin structure on the buffer layer, wherein the stacked fin structure comprises a first semiconductor layer comprising germanium and a second semiconductor layer comprising germanium and tin;
- forming an epitaxial structure in physical contact with the buffer layer and the second semiconductor layer, wherein the epitaxial structure comprises germanium and tin;
- and
- forming a gate structure on a top surface of the buffer layer and wrapped around a portion of the second semiconductor layer.
Dependencies are inferred from the claim text.