Semiconductor component having a SiC semiconductor body
AssigneeInfineon Technologies AG
InventorsAndreas Peter Meiser, Caspar Leendertz, Anton Mauder
Life of this patent
Estimating the term…
Abstract
A silicon carbide substrate has a trench extending from a main surface of the silicon carbide substrate into the silicon carbide substrate. The trench has a trench width at a trench bottom. A shielding region is formed in the silicon carbide substrate. The shielding region extends along the trench bottom. In at least one doping plane extending approximately parallel to the trench bottom, a dopant concentration in the shielding region over a lateral first width deviates by not more than 10% from a maximum value of the dopant concentration. The first width is less than the trench width and is at least 30% of the trench width.
Claims12
A semiconductor component, comprising:
- a SiC semiconductor body;
- a gate electrode structure extending from a first surface of the SiC semiconductor body into the SiC semiconductor body, the gate electrode structure having a conductive connection structure and a structure width at a bottom of the gate electrode structure;
- a shielding region formed in the SiC semiconductor body along the bottom, the shielding region having a central section which has a lateral first width;
- and
- a contact formed between the conductive connection structure and the shielding region,
- wherein in at least one doping plane extending approximately parallel to the bottom, a dopant concentration in the central section deviates by not more than 10% from a maximum value of the dopant concentration in the shielding region in the doping plane,
- wherein the first width is less than the structure width and is at least 30% of the structure width.
A semiconductor component, comprising:
- a silicon carbide substrate having a trench which extends from a main surface of the silicon carbide substrate into the silicon carbide substrate and has a trench width at a trench bottom;
- and
- a shielding region in the silicon carbide substrate and extending along the trench bottom,
- wherein in at least one doping plane extending approximately parallel to the trench bottom, a dopant concentration in the shielding region over a lateral first width deviates by not more than 10% from a maximum value of the dopant concentration in the doping plane,
- wherein the first width is less than the trench width and is at least 30% of the trench width.
Dependencies are inferred from the claim text.