Semiconductor devices and methods of forming the same

A method of forming a semiconductor device, comprising:

• forming a semiconductor fin over a substrate;
• forming a gate structure along sidewalls and a top surface of a first portion of the semiconductor fin, wherein the gate structure exposes a second portion of the semiconductor fin;
• forming a dielectric layer on the substrate, covering the exposed second portion of the semiconductor fin;
• removing a part of the dielectric layer to form a first hole, wherein the first hole exposes the second portion of the semiconductor fin;
• removing a part of the second portion of the semiconductor fin to form a second hole below the first hole;
• forming a source/drain feature in the second hole, wherein the source/drain feature defines a recessed region that is lower than the top surface of the first portion of the semiconductor fin;
• and
• forming a source/drain contact in the recessed region and the first hole.