Back to results
US 11,600,698 B2Granted
Semiconductor devices
AssigneeSamsung Electronics Co., Ltd.
InventorsNamkyu Edward Cho, Seung Soo Hong, Geum Jung Seong, Seung Hun Lee, Jeong Yun Lee
Life of this patent
Estimating the term…
Abstract
A semiconductor device includes fin patterns on a substrate, at least one gate electrode intersecting the fin patterns, source/drain regions on upper surfaces of the fin patterns, and at least one blocking layer on a sidewall of a first fin pattern of the fin patterns, the at least one blocking layer extending above an upper surface of the first fin pattern of the fin patterns, wherein a first source/drain region of the source/drain regions that is on the upper surface of the first fin pattern has an asymmetric shape and is in direct contact with the at least one blocking layer.
Claims20
A semiconductor device, comprising:
- a substrate;
- a first fin on the substrate;
- a second fin on the substrate;
- a third fin on the substrate;
- a fourth fin on the substrate;
- a first isolation on the substrate, the first isolation being between the first fin and the second fin;
- a second isolation on the substrate, the second isolation being between the second fin and the third fin;
- a third isolation on the substrate, the third isolation being between the third fin and the fourth fin;
- a gate on the first fin, the second fin, the third fin, the fourth fin, the first isolation, the second isolation, and the third isolation;
- a first epitaxial source/drain on the first fin;
- a second epitaxial source/drain on the second fin;
- a third epitaxial source/drain on the third fin;
- a fourth epitaxial source/drain on the fourth fin;
- a first blocking pattern on the first isolation, the first blocking pattern contacting and extending along a side surface of each of the second fin and the second epitaxial source/drain;
- and
- a second blocking pattern on the third isolation, the second blocking pattern contacting and extending along a side surface of each of the third fin and the third epitaxial source/drain,
- wherein the second epitaxial source/drain and the third epitaxial source/drain are merged and are spaced apart from each of the first epitaxial source/drain and the fourth epitaxial source/drain, neither of the second epitaxial source/drain and the third epitaxial source/drain extending laterally beyond the first blocking pattern and the second blocking pattern, respectively, when extending laterally in a direction toward the first and second blocking patterns, respectively,
- wherein a width of the second isolation is less than a width of the first isolation and less than a width of the third isolation, and
- wherein a height of the first blocking pattern is substantially the same as a height of the second blocking pattern.
16 more elements
A semiconductor device, comprising:
- a substrate;
- a first fin on the substrate;
- a second fin on the substrate;
- a third fin on the substrate;
- a fourth fin on the substrate;
- a first isolation on the substrate, the first isolation being between the first fin and the second fin;
- a second isolation on the substrate, the second isolation being between the second fin and the third fin;
- a third isolation on the substrate, the third isolation being between the third fin and the fourth fin;
- a gate on the first fin, the second fin, the third fin, the fourth fin, the first isolation, the second isolation, and the third isolation;
- a first epitaxial source/drain on the first fin;
- a second epitaxial source/drain on the second fin;
- a third epitaxial source/drain on the third fin;
- a fourth epitaxial source/drain on the fourth fin;
- a first blocking pattern on the first isolation, the first blocking pattern contacting and extending along a side surface of each of the second fin and the second epitaxial source/drain;
- and
- a second blocking pattern on the third isolation, the second blocking pattern contacting and extending along a side surface of each of the third fin and the third epitaxial source/drain,
- wherein the second epitaxial source/drain and the third epitaxial source/drain are merged and are spaced apart from each of the first epitaxial source/drain and the fourth epitaxial source/drain, neither of the second epitaxial source/drain and the third epitaxial source/drain extending laterally beyond the first blocking pattern and the second blocking pattern, respectively, when extending laterally in a direction toward the first and second blocking patterns, respectively,
- wherein a width of the second isolation is less than a width of the first isolation and less than a width of the third isolation, and
- wherein a top portion of the first blocking pattern is at a higher level than a top portion of the second blocking pattern.
16 more elements
A semiconductor device, comprising:
- a substrate;
- a first fin on the substrate;
- a second fin on the substrate;
- a third fin on the substrate;
- a fourth fin on the substrate;
- a first isolation on the substrate, the first isolation being between the first fin and the second fin;
- a second isolation on the substrate, the second isolation being between the second fin and the third fin;
- a third isolation on the substrate, the third isolation being between the third fin and the fourth fin;
- a gate on the first fin, the second fin, the third fin, the fourth fin, the first isolation, the second isolation, and the third isolation;
- a first epitaxial source/drain on the first fin;
- a second epitaxial source/drain on the second fin;
- a third epitaxial source/drain on the third fin;
- a fourth epitaxial source/drain on the fourth fin;
- and
- a blocking pattern on the first isolation, the blocking pattern contacting and extending along a side surface of each of the first fin and the first epitaxial source/drain, and the first epitaxial source/drain not extending laterally beyond the blocking pattern when extending laterally in a direction toward the blocking pattern,
- wherein the second epitaxial source/drain and the third epitaxial source/drain are merged and are spaced apart from each of the first epitaxial source/drain and the fourth epitaxial source/drain,
- wherein a width of the second isolation is less than a width of the first isolation and less than a width of the third isolation, and
- wherein a top portion of the fourth epitaxial source/drain is at a higher level than a top portion of the first epitaxial source/drain.
15 more elements
Dependencies are inferred from the claim text.