Semiconductor device including trench electrode structures

A method of manufacturing a semiconductor device, comprising:

• forming a plurality of trench electrode structures in a semiconductor body, the semiconductor body including a first main surface, the plurality of trench electrode structures extending in parallel along a first lateral direction, a first one of the plurality of trench electrode structures including a gate electrode;
• forming a gate contact electrically connected to the gate electrode in a gate contact area, the gate contact area being arranged in a first section along the first lateral direction;
• forming a source contact area arranged in a second section along the first lateral direction;
• and
• forming an isolation structure arranged between the gate contact and the semiconductor body in the gate contact area,
• wherein a bottom side of the isolation structure is arranged between a bottom side of the first one of the plurality of trench electrode structures and the first main surface along a vertical direction,
• wherein the gate contact extends up to or below the first main surface along the vertical direction,
• wherein a second one of the plurality of trench electrode structures includes a first source electrode, wherein the source contact area is arranged in the second section along the first lateral direction, wherein the gate contact area is arranged between an edge of the semiconductor body and the source contact area, and wherein a first lateral distance between the first one of the plurality of trench electrode structures and the edge along the first lateral direction is smaller than a second lateral distance between the second one of the plurality of trench electrode structures and the edge along the first lateral direction.