Semiconductor device
AssigneesKabushiki Kaisha Toshiba, Toshiba Electronic Devices & Storage Corporation
InventorsSozo Kanie, Hiroshi Kono
Life of this patent
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Abstract
According to one embodiment, a semiconductor device has a cell region and an end region adjacent to the cell region in a first direction and surrounding the cell region. A first semiconductor layer of a first conductivity type is in the cell region and the end region. Guard rings of a second conductivity type are at a first surface in the end region. The guard rings surround the cell region. An insulating film is on the first surface in the end region. Conductive members are on the insulating film and separated from the guard rings in a second direction. A first conductive member has a cell-region-side edge above a central portion of a first guard ring. The first guard ring has an end-region-side edge below a central portion of the first conductive member.
Claims20
A semiconductor device, comprising:
- a cell region;
- an end region adjacent to the cell region in a first direction and surrounding the cell region;
- a first semiconductor layer of a first conductivity type in the cell region and the end region;
- a plurality of guard rings of a second conductivity type at a first surface of the first semiconductor layer in the end region, the guard rings surrounding the cell region and being concentrically spaced from each other in the first direction;
- an insulating film on the first surface of the first semiconductor layer in the end region;
- and
- a plurality of conductive members on the insulating film and separated from the plurality of guard rings by the insulating film in a second direction orthogonal to the first surface, wherein
- a first conductive member in the plurality of conductive members has a cell-region-side edge above, in the second direction, a central portion of a first guard ring in the plurality of guard rings, the first guard ring having an end-region-side edge below, in the second direction, a central portion of the first conductive member.
A semiconductor device, comprising:
- a cell region;
- an end region adjacent to the cell region in a first direction and surrounding the cell region;
- a first semiconductor layer of a first conductivity type in the cell region and the end region;
- a first guard ring of a second conductivity type at a first surface of the first semiconductor layer in the end region, the first guard ring surrounding the cell region;
- an insulating film on the first surface of the first semiconductor layer in the end region;
- and
- a first conductive member on the insulating film and separated from the first guard ring by the insulating film in a second direction orthogonal to the first surface, wherein
- the first conductive member has a cell-region-side edge above, in the second direction, a central portion of the first guard ring, and
- the first guard ring has an end-region-side edge below, in the second direction, a central portion of the first conductive member.
Dependencies are inferred from the claim text.