Memory cells comprising ferroelectric material and including current leakage paths having different total resistances

A memory cell, comprising:

• a capacitor comprising:
• a first capacitor electrode comprising an annulus;
• a second capacitor electrode radially inside the annulus of the first capacitor electrode;
• ferroelectric material comprising an annulus between the second capacitor electrode and the annulus of the first capacitor electrode;
• and
• current-leakage material comprising an upwardly and downwardly-open annulus extending between the first and second capacitor electrodes, and being directly against each of the first and second capacitor electrodes.

A memory cell, comprising:

• a capacitor comprising:
• a first capacitor electrode comprising an annulus having laterally-spaced walls;
• a second capacitor electrode radially inside the annulus of the first capacitor electrode;
• ferroelectric material comprising an annulus having laterally-spaced walls radially between the second capacitor electrode and the annulus of the first capacitor electrode;
• current-leakage material comprising an annulus having laterally-spaced walls extending between the first and second capacitor electrodes, and being directly against each of the first and second capacitor electrodes, the laterally-spaced walls of the annulus of the first capacitor electrode being directly against a bottom of the laterally-spaced walls of the annulus of the current-leakage material, individual ones of the laterally-spaced walls of the annulus of the first capacitor electrode at locations where such are directly against the bottom of laterally-spaced walls of the annulus of the current-leakage material having the same lateral width as said bottom of the laterally-spaced walls of the annulus of the current-leakage material.