Power converter embodied in a semiconductor substrate member

A power converter comprising a semiconductor substrate member comprising:

• a first region with a passive electrical component with a first electrically conductive layer pattern of an electrically conductive material and a second electrically conductive layer pattern of the electrically conductive material deposited on respective sides of the semiconductor substrate member;
• wherein a trench or through-hole is formed in the substrate within the first region, and wherein the electrically conductive material is deposited at least on a bottom portion of the trench or on a sidewall of the through-hole and electrically connected to one or both of the first conductive layer pattern and the second conductive layer pattern;
• a second region with an active semiconductor component embedded in the semiconductor substrate member by a semiconductor fabrication process;
• and a capacitor formed by:
• a first capacitor member which comprises a conductive material deposited in first deep trenches extending from a first side of the semiconductor substrate;
• and a second capacitor member which comprises the conductive material deposited in second deep trenches extending from a second side of the semiconductor substrate, wherein the power converter is embedded in a single semiconductor substrate piece by a semiconductor manufacturing process.

A stack of components, comprising:

• one or more semiconductor substrate members, each comprising;
• a first region with a passive electrical component with a first electrically conductive layer pattern of an electrically conductive material and a second electrically conductive layer pattern of the electrically conductive material deposited on respective sides of the semiconductor substrate member;
• wherein a trench or through-hole is formed in the substrate within the first region, and wherein the electrically conductive material is deposited at least on a bottom portion of the trench or on a sidewall of the through-hole and electrically connected to one or both of the first conductive layer pattern and the second conductive layer pattern;
• a second region with an active semiconductor component embedded in the semiconductor substrate member by a semiconductor fabrication process;
• and an inductor formed in the first region with an inductor winding of the inductor comprising:
• a first winding portion formed in the first electrically conductive layer pattern, a second winding portion formed by a first through-substrate-via, a third winding portion formed in the second electrically conductive layer pattern, and a fourth winding portion formed by a second through-substrate-via;
• wherein the first, second, third and fourth portions are electrically connected by the deposited electrically conductive material;
• wherein the inductor winding circumscribes an inductor core which has an array of deep trenches laminated with a first layer of a magnetic material and a second layer of a non-magnetic material;
• wherein at least one of the semiconductor substrate member comprises pad portions on a top side and pad portions on a bottom side;
• and wherein each semiconductor substrate member is embedded in a single semiconductor substrate piece by a semiconductor manufacturing process.

A stack of components, comprising:

• one or more semiconductor substrate members, each comprising;
• a first region with a passive electrical component with a first electrically conductive layer pattern of an electrically conductive material and a second electrically conductive layer pattern of the electrically conductive material deposited on respective sides of the semiconductor substrate member;
• wherein a trench or through-hole is formed in the substrate within the first region, and wherein the electrically conductive material is deposited at least on a bottom portion of the trench or on a sidewall of the through-hole and electrically connected to one or both of the first conductive layer pattern and the second conductive layer pattern;
• and a second region with an active semiconductor component embedded in the semiconductor substrate member by a semiconductor fabrication process;
• and a capacitor formed by:
• a first capacitor member which comprises a conductive material deposited in first deep trenches extending from a first side of the semiconductor substrate;
• and a second capacitor member which comprises the conductive material deposited in second deep trenches extending from a second side of the semiconductor substrate;
• wherein at least one of the semiconductor substrate member comprises pad portions on a top side and pad portions on a bottom side;
• and wherein each semiconductor substrate member is embedded in a single semiconductor substrate piece by a semiconductor manufacturing process.