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US 11,600,683 B2Granted
Display apparatus comprising different types of thin film transistors with compact design and method for manufacturing the same
AssigneeLG Display Co., Ltd.
InventorYewon Hong
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Abstract
Discussed is a display apparatus capable of realizing a high resolution and a small power consumption, and a method for manufacturing the same, wherein the display apparatus includes a bottom gate type first thin film transistor disposed in a display area, and a top gate type second thin film transistor disposed in a non-display area.
Claims11
A display apparatus comprising:
- a display area configured to display an image;
- and
- a non-display area on which an image is not displayed,
- wherein the display area includes a first thin film transistor, and the non-display area includes a second thin film transistor,
- wherein the first thin film transistor includes:
- a first gate electrode on a substrate;
- a first active layer on the first gate electrode;
- a first gate insulating film between the first active layer and the first gate electrode;
- and
- a first source electrode and a first drain electrode which are spaced apart from each other, and are respectively connected with the first active layer,
- wherein the second thin film transistor includes:
- a second active layer on the substrate;
- a second gate electrode on the second active layer;
- a second source electrode and a second drain electrode which are spaced apart from each other, and are respectively connected with the second active layer;
- and
- a second gate insulating film between the second active layer and the second gate electrode, between the second active layer and the second source electrode, and between the second active layer and the second drain electrode,
- wherein the first active layer and the second active layer include an oxide semiconductor material,
- wherein the first gate electrode is disposed between the substrate and the first active layer, and the second active layer is disposed between the substrate and the second gate electrode,
- wherein the first gate insulating film is disposed between the substrate and the second active layer, and
- wherein the second gate insulating film contacts the second source electrode and the second drain electrode.
17 more elements
Dependencies are inferred from the claim text.