Display device and manufacturing method thereof

A display device, comprising a base substrate and at least one pixel circuit provided on the base substrate, wherein

• the pixel circuit comprises a driving transistor, a first transistor, and a second transistor;
• the driving transistor comprises a control electrode, a first electrode, and a second electrode, and is configured to control a driving current, flowing through the first electrode of the driving transistor and the second electrode of the driving transistor, for driving a light-emitting element to emit light according to a voltage of the control electrode of the driving transistor;
• a first electrode of the first transistor is connected to the control electrode of the driving transistor, and is configured to write a data signal to the control electrode of the driving transistor in response to a first scan signal;
• a first electrode of the second transistor is connected to the control electrode of the driving transistor, and is configured to write the data signal to the control electrode of the driving transistor in response to a second scan signal;
• the base substrate comprises a semiconductor body that can be doped, and a first conductive layer and a second conductive layer that are on the semiconductor body;
• the first transistor comprises a first doped region in contact with the first electrode of the first transistor, and a second doped region in contact with a second electrode of the first transistor, and the first doped region of the first transistor and the second doped region of the first transistor are spaced apart from each other, have a same doping type, and are both in the semiconductor body;
• the first transistor further comprises a drift doped region in contact with the first doped region, and the drift doped region of the first transistor and the second doped region of the first transistor are spaced apart from each other, have a same doping type, and are both in the semiconductor body;
• an orthographic projection of a gate electrode of the first transistor on the base substrate partially overlaps with an orthographic projection of the drift doped region of the first transistor on the base substrate, and an orthographic projection of the first doped region of the first transistor on the base substrate is in the orthographic projection of the drift doped region of the first transistor on the base substrate;
• a doping concentration of the drift doped region of the first transistor is smaller than a doping concentration of the first doped region of the first transistor;
• and
• the drift doped region of the first transistor includes a first portion and a second portion, and the orthographic projection of the second portion on the base substrate overlaps with the orthographic projection of the first doped region of the first transistor on the base substrate.