Organic light-emitting diode display device

A light-emitting display device, comprising:

• a substrate with a display area and a non-display area;
• a first supply voltage line disposed on the substrate, wherein the first supply voltage line extends in a first direction;
• an initialization voltage supply line disposed on the substrate, wherein the initialization voltage supply line extends in a second direction different from the first direction;
• a light emitting diode disposed on the substrate;
• a first transistor, a second transistor, a third transistor, and a fourth transistor electrically connected in a row from the first supply voltage line to the initialization voltage supply line;
• a capacitor electrically connected to a gate electrode of the second transistor and the first supply voltage line;
• and
• a fifth transistor electrically connected in a row from the second transistor to the light emitting diode,
• wherein the gate electrode of the second transistor is electrically connected to the initialization voltage supply line through the fourth transistor,
• wherein the gate electrode of the second transistor is electrically connected the light emitting diode through the third transistor and the fifth transistor,
• wherein a semiconductor layer of the second transistor is made of a different material than a semiconductor layer of the third transistor and a semiconductor layer of the fourth transistor,
• wherein the light-emitting display device further comprises:
• a first insulating layer disposed between the substrate and the semiconductor layer of the third transistor,
• a second insulating layer disposed on the semiconductor layer of the third transistor,
• a third insulating laver disposed on the second insulating layer,
• a fourth insulating layer disposed between the first insulating layer and the substrate,
• a conductive layer disposed on the third insulating layer,
• a first semiconductor layer disposed between the fourth insulating laver and the substrate, wherein the first semiconductor layer includes the semiconductor layer of the second transistor, and
• a second semiconductor layer disposed between the fourth insulating layer and the substrate, wherein the second semiconductor layer includes the semiconductor layer of the third transistor and the semiconductor layer of the fourth transistor,
• wherein the first semiconductor layer and the second semiconductor layer are disposed in the display area, and
• wherein the conductive layer comprises:
• a first electrode directly connected to the first semiconductor layer,
• a second electrode directly connected to the first semiconductor layer and spaced apart from the first electrode,
• a third electrode directly connected to the second semiconductor layer, and
• a fourth electrode directly connected to the second semiconductor layer and spaced apart from the third electrode.