Thin film transistor array substrate and electronic device including the same

An electronic device comprising:

• a panel including a substrate;
• a buffer layer disposed on the substrate;
• at least one first thin film transistor disposed on the buffer layer and comprising a first active layer being an oxide semiconductor layer including molybdenum at a content of 1.3 to 4.2 atomic percent (at. %) and a first gate electrode;
• at least one second thin film transistor disposed on the buffer layer and comprising a second gate electrode and a second active layer being an oxide semiconductor layer, and spaced apart from the first active layer;
• a first gate insulating film overlapping with the first active layer and the second active layer;
• a first gate electrode of the first thin film transistor overlapping with the first gate insulating film and a part of the first active layer;
• a second gate electrode of the second thin film transistor overlapping with the first gate insulating film, spaced apart from the first gate electrode and overlapping with a part of the second active layer;
• and
• a driving circuit configured to drive the panel.