Memory devices and methods of forming memory devices

A memory structure comprising a plurality of memory devices, wherein each memory device comprises:

• a substrate;
• a bottom electrode arranged over the substrate, the bottom electrode including a first bottom electrode portion and a second bottom electrode portion;
• one or more switching layers arranged over the bottom electrode, the one or more switching layers including a first switching layer and a second switching layer;
• and
• a one or more top electrodes arranged over the one or more switching layers, the one or more top electrodes including a first top electrode and a second top electrode;
• wherein the first top electrode is arranged over the first switching layer, the first switching layer is arranged conformally over the first bottom electrode portion, the second top electrode portion is arranged over the second switching layer, the second switching layer is arranged conformally over the second bottom electrode portion,
• wherein each of the first and second bottom electrode portions comprises a corner tip facing the first and second switching layers respectively, and wherein an angle of each corner tip is less than ninety degrees,
• wherein each of the first and second switching layers comprises a corner tip with an angle less than ninety degrees,
• wherein each of the first and second bottom electrode portions includes a concave top surface, a side surface, and a flat bottom surface, wherein the concave top surface joins the side surface to form the corner tip, and
• wherein the corner tip of the first bottom electrode portion faces away from the corner tip of the second bottom electrode portion, and
• wherein the substrates of the plurality of memory devices are integrally formed as a common substrate.

A method of fabricating a memory device, the method comprising:

• providing a substrate;
• forming a bottom electrode over the substrate, the bottom electrode including a first bottom electrode portion and a second bottom electrode portion;
• forming one or more switching layers over the bottom electrode, the one or more switching layers including a first switching layer and a second switching layer;
• and
• forming one or more top electrodes over the one or more switching layers, the one or more top electrodes including a first top electrode and a second top electrode;
• wherein the first top electrode is arranged over the first switching layer, the first switching layer is arranged conformally over the first bottom electrode portion, the second top electrode is arranged over the second switching layer, the second switching layer is arranged conformally over the second bottom electrode portion,
• wherein each of the first and second bottom electrode portions comprises a corner tip facing the first and second switching layers respectively, and wherein an angle of each corner tip is less than ninety degrees,
• wherein each of the first and second switching layers comprises a corner tip with an angle less than ninety degrees,
• wherein each of the first and second bottom electrode portions includes a concave top surface, a side surface, and a flat bottom surface, wherein the concave top surface joins the side surface to form the corner tip, and
• wherein the corner tip of the first bottom electrode faces away from the corner tip of the second bottom electrode portion.