Cross-point magnetic random access memory with piezoelectric selector

A system comprising:

• a memory;
• a processor coupled to the memory, the processor including
• a first interconnect extending along a first axis;
• a second interconnect extending along a second axis;
• a third interconnect extending along a third axis, wherein the first, second, and third axes are orthogonal to one another;
• a magnetic junction device including a electrode coupled to the first interconnect;
• a first layer comprising a piezoelectric material;
• and
• a second layer between the magnetic junction device and the first layer, the second layer comprising one or both of ruthenium and tungsten.

An apparatus comprising:

• a three dimensional (3D) array of magnetic random access memory (MRAM) bit-cells, wherein the array includes a mesh of
• a first interconnect extending along a first axis;
• a second interconnect extending along a second axis;
• and
• a third interconnect extending along a third axis,
• wherein a bit-cell of the MRAM bit-cells includes
• a magnetic junction device including a electrode coupled to the first interconnect;
• a first layer comprising a piezoelectric material;
• and
• a second layer between the magnetic junction device and the first layer, the second layer having a thickness within a range of 5 nanometers (nm) to 10 nm.