A method for forming an integrated circuit component, comprising:
- providing an integrated circuit element on a substrate;
- forming an energy harvesting component on the substrate by
- forming a first conductor layer of a first conductive material on the substrate;
- surface conditioning a facing surface of the first conductor layer to have a comparatively low work function value;
- and
- arranging a second conductor layer formed of a second conductive material to have a facing surface of the second conductor layer facing the facing surface of the first conductor layer with a gap formed between respective facing surfaces of the first conductor layer and the second conductor layer, the gap being in a range of 100 angstroms or less in thickness in a direction orthogonal to the respective facing surfaces, the facing surface of the second conductor having a work function value at least 1.0 eV higher than the comparatively low work function value of the facing surface of the first conductor layer,
- the energy harvesting component having a stacked configuration on the substrate totaling less than 100 μm thick;
- and
- electrically connecting the energy harvesting component to the integrated circuit element, the energy harvesting component being configured to generate and electric potential at any temperature above absolute zero for powering the integrated circuit element.