Light emitting diode device
AssigneeLumileds LLC
InventorsRobert Armitage, Isaac Wildeson
Life of this patent
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Abstract
Described are light emitting diode (LED) devices including a combination of electroluminescent and photo-luminescent active regions in the same wafer to provide LEDs with emission spectra that are adjustable after epitaxial growth. The LED device includes a multilayer anode contact comprising a reflecting metal and at least one transparent conducting oxide layer in between the metal and the p-type layer surface. The thickness of the transparent conducting oxide layer may vary for LEDs fabricated with different emission spectra.
Claims19
A light emitting diode (LED) device comprising:
- a mesa array comprising a first mesa and a second mesa separated by a trench, the first mesa and the second mesa comprising a photoluminescent quantum well, an n-type layer on the photoluminescent quantum well, an electroluminescent quantum well on the n-type layer, and a p-type layer on the electroluminescent quantum well, the first mesa comprising a multilayer contact on the p-type layer and the second mesa comprising a p-type contact on the p-type layer, the trench having at least one side wall and extending to an n-type current spreading layer on a substrate.
A light emitting diode (LED) device comprising:
- a mesa array comprising a first mesa and a second mesa separated by a trench, the first mesa and the second mesa comprising a photoluminescent quantum well, an n-type layer on the photoluminescent quantum well, an electroluminescent quantum well on the n-type layer, and a p-type layer on the electroluminescent quantum well, the first mesa comprising a first contact on the p-type layer, the first contact comprising a first reflecting metal layer on a first transparent conductive oxide layer, the first transparent conductive oxide layer having a first thickness, and the second mesa comprising a second contact on the p-type layer, the second contact comprising a second reflecting metal layer on a second transparent conductive oxide layer, the second transparent conductive oxide layer having a second thickness, and the trench having at least one side wall and extending to an n-type current spreading layer on a substrate.
Dependencies are inferred from the claim text.