US 11,600,642 B2 · Layer stack for display applications

Abstract

Embodiments of the present disclosure generally relate to a layer stack including a high K dielectric layer formed over a first dielectric layer and a metal electrode. The high K dielectric layer has a K value of 20 or higher and may be formed as a part of a capacitor, a gate insulating layer, or any suitable insulating layer in electronic devices, such as display devices. The layer stack includes a second dielectric layer disposed on the first dielectric layer and the metal layer, and the high K dielectric layer containing zirconium dioxide or hafnium dioxide disposed on the second dielectric layer. The second dielectric layer provides a homogenous surface on which the high K dielectric layer is formed. The homogeneous surface enables the high K dielectric material to be deposited uniformly thereover, resulting in a uniform thickness profile.

Claims20

Dependent claims

A structure, comprising:

a first metal electrode disposed on a first dielectric layer;
and
a layer stack disposed on the first dielectric layer and the first metal electrode, the layer stack comprising:
a second dielectric layer disposed on and in contact with the first dielectric layer and the first metal electrode;
a high K dielectric layer disposed on and in contact with the second dielectric layer, wherein:
the high K dielectric layer is distinct from the second dielectric layer;
the high K dielectric layer comprises zirconium dioxide or hafnium dioxide;
the high K dielectric layer is in contact with the second dielectric layer at a location over the first metal electrode;
and
the high K dielectric layer has a thickness of about 250 Angstroms to about 900 Angstroms;
and
a silicon nitride layer disposed on and in contact with the high K dielectric layer.

9 more elements

Dependencies are inferred from the claim text.

Layer stack for display applications

Life of this patent

Layer stack for display applications

Life of this patent

Abstract

Claims20