Transistor substrate

A transistor substrate comprising:

• a semiconductor chip;
• first metal lines formed in a first metal layer;
• second metal lines formed in a second metal layer, which is a different layer from the first metal layer;
• third metal lines formed in a third metal layer, which is a different layer from the first and second metal layers;
• an organic insulating film arranged between the second metal layer and the third metal layer;
• and
• a first lead-out wiring that passes through a respective second metal lines of the second metal lines from a respective first metal line of the first metal lines;
• wherein
• the first lead-out wiring is electrically connected to the semiconductor chip,
• a third metal line of the third metal lines overlaps a second metal line of the first lead-out wiring,
• the second metal line of the first lead-out wiring has a second width,
• the third metal line has a third width, and
• a center of the second width is shifted from a center of the third width.