Stacked connections in 3D memory and methods of making the same
AssigneeYangtze Memory Technologies Co., Ltd.
InventorsJun Liu, Zongliang Huo
Life of this patent
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Abstract
Embodiments of three-dimensional memory device architectures and fabrication methods therefore are disclosed. In an example, the memory device includes a substrate having a first layer stack on it. The first layer stack includes alternating conductor and insulator layers. A second layer stack is disposed over the first layer stack where the second layer stack also includes alternating conductor and insulator layers. One or more vertical structures extend through the first layers stack. A conductive material is disposed on a top surface of the one or more vertical structures. One or more second vertical structures extend through the second layer stack and through a portion of the conductive material.
Claims20
A memory device, comprising:
- a first layer stack having first alternating conductor and insulator layers;
- a second layer stack, disposed over the first layer stack and having second alternating conductor and insulator layers;
- one or more first vertical structures extending through the first layer stack;
- one or more second vertical structures extending through the second layer stack;
- a conductive material sandwiched between the one or more first vertical structures and the one or more second vertical structures, wherein
- a first portion of the conductive material is inside the one or more first vertical structures;
- and
- a second portion of the conductive material is outside the one or more first vertical structures;
- and
- a top dielectric layer, sandwiched between the first layer stack and the second layer stack and surrounding the conductive material.
Dependencies are inferred from the claim text.