Three-dimensional memory device containing bump stack structures and method of deformation measurement thereof

A three-dimensional memory device, comprising:

• an alternating stack of insulating layers and electrically conductive layers;
• pillar structures vertically extending through the alternating stack, wherein each of the pillar structures comprises a vertical semiconductor channel and a memory film;
• bump stack structures comprising a base bump portion located underneath the alternating stack and a respective subset of the bump portions located in the alternating stack that overlie the base bump portion;
• and
• protrusion structures located over the alternating stack and laterally spaced from the bump stack structures,
• wherein each of the insulating layers and the electrically conductive layers comprise a planar portion located between a planar top surface and a planar bottom surface and the bump portions that are adjoined to the planar portion at a respective periphery and having a respective raised top surface that is vertically raised from the planar top surface and a respective raised bottom surface that is raised from the planar bottom surface.