US 11,600,633 B2Granted

Local contacts of three-dimensional memory devices and methods for forming the same

AssigneeYangtze Memory Technologies Co., Ltd.

InventorsJianzhong Wu, Kun Zhang, Tingting Zhao, Rui Su, Zhongwang Sun, Wenxi Zhou, Zhiliang Xia

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Abstract

Embodiments of 3D memory devices and methods for forming the same are disclosed. In an example, a 3D memory device includes a substrate, a memory stack, a channel structure, a channel local contact, and a slit structure. The memory stack includes interleaved conductive layers and dielectric layers above the substrate. The channel structure extends vertically through the memory stack. The channel local contact is above and in contact with the channel structure. The slit structure extends vertically through the memory stack. The slit structure includes a contact including a first contact portion and a second contact portion above the first contact portion and having a different material of the first contact portion. An upper end of the second contact portion of the slit structure is flush with an upper end of the channel local contact.

Claims12

Dependent claims

A three-dimensional (3D) memory device, comprising:

a substrate;
a memory stack comprising interleaved conductive layers and dielectric layers above the substrate;
a plurality of channel structures extending vertically through the memory stack;
a plurality of channel local contacts each of which is above and in contact with one of the plurality of channel structures;
and
a slit structure extending vertically through the memory stack and laterally in a bit-line direction, wherein the slit structure separates the memory stack into a plurality of blocks, and wherein each of the plurality of blocks comprise a subset of the plurality of channel structures,
wherein the slit structure comprises a contact comprising a first contact portion and a second contact portion above the first contact portion and having a different material of the first contact portion,
wherein an upper end of the second contact portion of the slit structure is coplanar with an upper end of each of the plurality of channel local contacts, and
wherein the first contact portion of the slit structure comprises polysilicon, and the second contact portion of the slit structure and each of the plurality of channel local contacts comprise a same metal.

6 more elements

Dependencies are inferred from the claim text.

Facts

Application: 16/862,368Filed 29 Apr 2020 · continuation
Priority: 20 Jan 2020
Published: US 2021/0225863 A122 Jul 2021
Granted: 7 Mar 2023
Term ends: Not estimatedThe source records don’t support an estimate.

Classification12 codes

H10B 43/27
With source and drain on different levels, e.g. with sloping channels: the channels comprising vertical portions, e.g. U-shaped channels
H10B 41/27
With source and drain on different levels, e.g. with sloping channels: the channels comprising vertical portions, e.g. U-shaped channels
H10B 41/35
Characterised by the memory core region: with a cell select transistor, e.g. NAND
H10B 43/35
Characterised by the memory core region: with cell select transistors, e.g. NAND