Vertical memory with simplified integration

A vertical memory device, comprising:

• a circuit pattern on a substrate;
• a base pattern and a base insulation layer on the circuit pattern;
• a first structure on the base pattern, the first structure including gate patterns spaced apart from each other in a vertical direction perpendicular to an upper surface of the substrate, and the gate patterns extending in a first direction parallel to the upper surface of the substrate;
• a second structure connected to the first structure, the second structure including pad patterns in separate layers, wherein the pad patterns are electrically connected to the gate patterns of a same layer;
• a channel structure passing through the gate patterns, and the channel structure extending in the vertical direction;
• a first contact plug passing through the second structure and electrically connected with a pad pattern of one of the layers, and the first contact plug extending in the vertical direction;
• and
• at least one bent portion is included at a sidewall of the channel structure and a sidewall of the first contact plug,
• wherein the bent portion of the channel structure and the bent portion of the first contact plug are coplanar with each other, and
• wherein an upper surface of the channel structure and an upper surface of the first contact plug are coplanar with each other.

A vertical memory device, comprising:

• a first structure on a substrate, the first structure including gate patterns spaced apart from each other in a vertical direction perpendicular to an upper surface of the substrate, and the gate patterns extending in a first direction parallel to the upper surface of the substrate;
• a second structure connected to the first structure, the second structure including pad patterns spaced apart in separate layers and electrically connected to gate patterns of a same layer;
• a channel structure passing through the gate patterns, and the channel structure extending in the vertical direction;
• a first contact plug passing through the second structure and electrically connected with a pad pattern of one of the layers, and the first contact plug extending in the vertical direction, and the first contact plug passing through the second structure, wherein the first contact plug is electrically insulated from gate patterns of other layers through which the first contact plug passes;
• a third structure spaced apart from the second structure;
• and
• a second contact plug passing through the third structure, and the second contact plug extending in the vertical direction,
• wherein an upper surface of the channel structure and upper surfaces of the first contact plug and the second contact plug are coplanar with each other,
• wherein at least one of a sidewall of the channel structure and sidewalls of the first contact plug and the second contact plug includes at least one bent portion, and
• wherein the bent portion of the channel structure and the bent portions of the first contact plug and the second contact plug are coplanar with each other.