Memory and method for forming the same
AssigneeShanghai Huahong Grace Semiconductor Manufacturing Corporation
InventorTao Yu
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Abstract
The present disclosure provides a memory and a method for forming the memory. The memory includes: a substrate including a first storage area and a second storage area; a source region disposed in the substrate between the first storage area and the second storage area; a first drain region and a second drain region in the substrate on both sides of the first storage area and the second storage area; a first storage structure disposed on the first storage area, including a first storage unit, a second storage unit, and a first word line gate; and a second storage structure disposed on the second storage area, including a third storage unit, a fourth storage unit, and a second word line gate. The memory can obtain an improved performance.
Claims8
A memory, comprising:
- a substrate, comprising a first storage area and a second storage area which are close to and separated from each other;
- a source region, disposed in the substrate between the first storage area and the second storage area;
- a first drain region and a second drain region, disposed in the substrate on both sides of the first storage area and the second storage area;
- a first storage structure, disposed on the first storage area, wherein the first storage structure comprises a first storage unit, a second storage unit, and a first word line gate between the first storage unit and the second storage unit;
- and
- a second storage structure, disposed on the second storage area, wherein the second storage structure comprises a third storage unit, a fourth storage unit, and a second word line gate between the third storage unit and the fourth storage unit,
- a bit line coupled with the first drain region and the second drain region;
- wherein the source region, the first drain region and the first storage structure form the first storage unit and the second storage unit, and the source region, the second drain region and the second storage structure form the third storage unit and the fourth storage unit.
Dependencies are inferred from the claim text.