Semiconductor device having an offset source/drain feature and method of fabricating thereof
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsChih-Chuan Yang, Chia-Hao Pao, Wen-Chun Keng, Lien Jung Hung, Ping-Wei Wang
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Abstract
A semiconductor device and method of fabricating thereof where the device includes a fin structure between a first isolation region and a second isolation region. A first source/drain feature is formed over a recessed portion of the first fin structure. The first source/drain feature interfaces a top surface of the first isolation region for a first distance and interfaces the top surface of the second isolation region for a second distance. The first distance is different than the second distance. The source/drain feature is offset in a direction.
Claims20
A semiconductor device, comprising:
- a first isolation region and a second isolation region over a substrate;
- a first fin structure extending between the first isolation region and the second isolation region;
- a first source/drain feature comprising a first epitaxially-grown semiconductor material formed over the first fin structure;
- an etch stop layer disposed on sidewalls of the first epitaxially-grown semiconductor material of the first source/drain feature and on an upper surface of the first isolation region;
- and
- wherein the first epitaxially-grown semiconductor material of the first source/drain feature interfaces the upper surface of the first isolation region for a first distance, and first epitaxially-grown semiconductor material of the first source/drain feature interfaces an upper surface of the second isolation region for a second distance, wherein the first distance is different than the second distance.
A semiconductor device, comprising:
- a substrate having a first fin structure and a second fin structure, wherein a first isolation feature extends from a first sidewall of the first fin structure to a second sidewall of the second fin structure, and wherein the first isolation feature includes a first surface;
- a second isolation feature adjacent a third sidewall of the first fin structure, the third sidewall opposing the first sidewall and a third isolation feature adjacent a fourth sidewall of the second fin structure, wherein the fourth sidewall opposes the second sidewall, and wherein the second isolation feature includes a second surface coplanar the first surface;
- a first source/drain feature disposed over the first fin structure and a second source/drain feature disposed over the second fin structure, wherein the first source/drain feature is offset in a first direction from the first fin structure and the second source/drain feature is offset in a second direction from the second fin structure, wherein the first direction is parallel and opposite the second direction, wherein the first source/drain feature has an interface with the second surface of the second isolation feature of a first length and an interface with the first surface of the first isolation feature of a second length, wherein the second length is coplanar to and less than the first length.
A semiconductor device, comprising:
- a substrate having a first fin structure and a second fin structure, wherein a first isolation feature extends from a first sidewall of the first fin structure to a second sidewall of the second fin structure;
- a second isolation feature adjacent a third sidewall of the first fin structure, the third sidewall opposing the first sidewall and a third isolation feature adjacent a fourth sidewall of the second fin structure, wherein the fourth sidewall opposes the second sidewall;
- a first epitaxial source/drain feature disposed over the first fin structure and a second epitaxial source/drain feature disposed over the second fin structure, wherein a centerline of the first fin structure is non-collinear with a centerline of the first epitaxial source/drain feature as drawn in a cross-sectional view perpendicular a top surface of the substrate, and a centerline of the first fin structure is non-collinear with a centerline of the first epitaxial source/drain feature as drawn in a top view parallel the top surface of the substrate.
Dependencies are inferred from the claim text.