Semiconductor memory device and method of fabricating the same
AssigneeSamsung Electronics Co., Ltd.
InventorsKyooho Jung, Younsoo Kim, Young-lim Park, Jeong-Gyu Song, Se Hyoung Ahn, Changmu An
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Abstract
Disclosed are semiconductor memory devices and methods of fabricating the same. The semiconductor memory device comprises a capacitor that includes a bottom electrode, a top electrode opposite to the bottom electrode across a dielectric layer, and an interface layer between the bottom electrode and the dielectric layer. The interface layer includes a combination of niobium (Nb), titanium (Ti), oxygen (O), and nitrogen (N), and further includes a constituent of the dielectric layer.
Claims20
A semiconductor memory device comprising:
- a substrate;
- a capacitor bottom electrode disposed over the substrate and including titanium nitride;
- a first interface layer disposed on the capacitor bottom electrode;
- a capacitor dielectric layer disposed on the first interface layer and including hafnium oxide;
- and
- a capacitor top electrode disposed on the capacitor dielectric layer,
- wherein the first interface layer includes a combination of hafnium (Hf), niobium (Nb), titanium (Ti), oxygen (O), and nitrogen (N).
A semiconductor memory device comprising:
- a substrate;
- a capacitor bottom electrode disposed over the substrate and including titanium nitride;
- a first interface layer disposed on the capacitor bottom electrode;
- a capacitor dielectric layer disposed on the first interface layer and including hafnium oxide and zirconium oxide;
- a second interface layer disposed on the capacitor dielectric layer;
- and
- a capacitor top electrode disposed on the second interface layer and including titanium nitride,
- wherein the first interface layer includes a combination of hafnium (Hf), niobium (Nb), titanium (Ti), oxygen (O), and nitrogen (N), and
- the second interface layer includes a combination of titanium (Ti), oxygen (O), and nitrogen (N).
A semiconductor memory device comprising:
- a substrate;
- a capacitor bottom electrode disposed over the substrate and including titanium nitride;
- a first interface layer disposed on the capacitor bottom electrode;
- a capacitor dielectric layer disposed on the first interface layer and including hafnium oxide and zirconium oxide;
- a second interface layer disposed on the capacitor dielectric layer;
- and
- a capacitor top electrode disposed on the second interface layer and including titanium nitride,
- wherein the first interface layer includes a combination of hafnium (Hf), niobium (Nb), titanium (Ti), oxygen (O), and nitrogen (N), and
- the second interface layer includes a combination of niobium (Nb), titanium (Ti), oxygen (O), and nitrogen (N).
Dependencies are inferred from the claim text.