Semiconductor power module

A semiconductor power module comprising:

• an insulating substrate of a thickness of 5 mm or less having one surface and the other surface;
• a first power supply terminal arranged at the one surface side of the insulating substrate;
• a second power supply terminal arranged at the other surface side of the insulating substrate such as to cancel out at least a part of a magnetic field generated from the first power supply terminal;
• and
• a switching device that is arranged at the one surface side of the insulating substrate, and to which at least a part of a terminal voltage between the first power supply terminal and the second power supply terminal is to be applied,
• wherein the switching device includes a first switching device and a second switching device that configures a half-bridge circuit with the first switching device,
• and the semiconductor power module further comprising:
• an output terminal that is electrically connected to a node between the first switching device and the second switching device and that has a thickness greater than a thickness of the first terminal or a thickness of the second terminal;
• a resin selectively covering the insulating substrate, the first power supply terminal, the second power supply terminal and the output terminal such as to partially expose the insulating substrate, the first power supply terminal, the second power supply terminal and the output terminal;
• a first control terminal controlling the first switching device;
• and
• a second control terminal controlling the second switching device;
• wherein the resin selectively covers the first control terminal and the second control terminal such as to partially expose the first control terminal and the second control terminal.