Manufacturing method of semiconductor device
AssigneeSK hynix Inc.
InventorJin Ha Kim
Life of this patent
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Abstract
A method of manufacturing a semiconductor device includes forming a cell chip including a first substrate, a source layer on the first substrate, a stacked structure on the source layer, and a channel layer passing through the stacked structure and coupled to the source layer, flipping the cell chip, exposing a rear surface of the source layer by removing the first substrate from the cell chip, performing surface treatment on the rear surface of the source layer to reduce a resistance of the source layer, forming a peripheral circuit chip including a second substrate and a circuit on the second substrate, and bonding the cell chip including the source layer with a reduced resistance to the peripheral circuit chip.
Claims20
A method of manufacturing a semiconductor device, the method comprising:
- forming a cell chip including a first substrate, a polysilicon layer on the first substrate, and a stacked structure on the polysilicon layer, wherein the stacked structure includes memory cells stacked on top of one another;
- flipping the cell chip;
- exposing a rear surface of the polysilicon layer by removing the first substrate from the cell chip;
- irradiating the polysilicon layer with a laser beam incident on the rear surface of the polysilicon layer;
- forming a peripheral circuit chip including a second substrate and a circuit on the second substrate;
- and
- bonding the cell chip including the polysilicon layer irradiated with the laser beam to the peripheral circuit chip.
A method of manufacturing a semiconductor device, the method comprising:
- forming a cell chip including a first substrate, a polysilicon layer on the first substrate, and a stacked structure on the polysilicon layer, wherein the stacked structure includes memory cells stacked on top of one another;
- flipping the cell chip;
- exposing a rear surface of the polysilicon layer by removing the first substrate from the cell chip;
- performing surface treatment on the rear surface of the polysilicon layer by implanting dopants into the rear surface of the polysilicon layer;
- forming a peripheral circuit chip including a second substrate and a circuit on the second substrate;
- and
- bonding the cell chip including the polysilicon layer implanted with the dopants to the peripheral circuit chip.
A method of manufacturing a semiconductor device, the method comprising:
- forming a cell chip including a first substrate, a polysilicon layer on the first substrate, and a stacked structure on the polysilicon layer, wherein the stacked structure includes memory cells stacked on top of one another;
- flipping the cell chip;
- exposing a rear surface of the polysilicon layer by removing the first substrate from the cell chip;
- performing surface treatment on the rear surface of the polysilicon layer to reduce a resistance of the polysilicon layer;
- forming a peripheral circuit chip including a second substrate and a circuit on the second substrate;
- and
- bonding the cell chip including the polysilicon layer with a reduced resistance to the peripheral circuit chip.
Dependencies are inferred from the claim text.