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US 11,600,589 B2Granted
Semiconductor device and semiconductor device manufacturing method
AssigneeLapis Semiconductor Co., Ltd.
InventorMasanori Shindo
Life of this patent
Estimating the term…
Abstract
A semiconductor device including a terminal that is formed using copper, that is electrically connected to a circuit element, and that includes a formation face formed with a silver-tin solder bump such that a nickel layer is interposed between the terminal and the solder bump, wherein the nickel layer is formed on a region corresponding to part of the formation face.
Claims9
A semiconductor device comprising:
- a terminal that is formed using copper, that is electrically connected to a circuit element, and that includes a formation face formed with a silver-tin solder bump such that a nickel layer is interposed between the terminal and the solder bump,
- wherein the nickel layer is formed on a region corresponding to part of the formation face, and the solder bump is formed directly at another region of the formation face of the terminal,
- the formation face has a circular shape in plan view, and
- the nickel layer is formed in an annular-shaped region that is concentric to the formation face, and an outer circumference of the annular-shaped region is disposed so as to run along an outer circumference of the formation face.
1 more element
A semiconductor device comprising:
- a terminal that is formed using copper and that is electrically connected to a circuit element;
- a nickel layer that is formed on a region corresponding to part of an upper face of the terminal;
- and
- a silver-tin solder bump that is formed directly on exposed copper at the upper face of the terminal and also on an upper portion of the nickel layer,
- wherein the upper face of the terminal has a circular shape in plan view, and
- the nickel layer is formed in an annular-shaped region that is concentric to the upper face, and an outer circumference of the annular-shaped region is disposed so as to run along an outer circumference of the upper face.
3 more elements
A semiconductor device manufacturing method comprising:
- a process of forming a circuit element including wiring on a semiconductor wafer, the circuit element including an opening corresponding to part of the wiring so as to externally expose the wiring;
- a process of forming a terminal at the opening using copper;
- a process of forming a nickel layer on part of an upper face of the terminal;
- and
- a process of forming a silver-tin solder bump on an upper portion of the nickel layer and directly on another part of the upper face of the terminal,
- wherein the upper face of the terminal has a circular shape in plan view, and
- the nickel layer is formed in an annular-shaped region that is concentric to the upper face, and an outer circumference of the annular-shaped region is disposed so as to run along an outer circumference of the upper face.
4 more elements
Dependencies are inferred from the claim text.