US 11,600,578 B2 · Scribe structure for memory device

Abstract

Apparatuses and methods for manufacturing chips are described. An example method includes: removing a first portion of a cover layer and at least one dielectric layer under the first portion of the cover layer in a cut region between chips to form a groove, and forming a support structure including a second portion of the cover layer and the at least one dielectric layer under the second portion of the cover layer in the cut region; removing a third portion of the cover layer in one of the chips and a portion of the at least one dielectric layer under the third portion of the cover layer to form an hole on the first chip; depositing a conductive layer to cover the cover layer and the hole; forming a conductive pillar on the conductive layer in the hole; and removing the conductive layer on the cover layer and an edge surface of the hole.

Claims16

Dependent claims

An apparatus, comprising:

a multilayer structure including:
a first circuit region;
a first edge surrounding the first circuit region;
a second circuit region;
a second edge surrounding the second circuit region and facing the first edge;
a substrate across the first circuit region and the second circuit region;
a plurality of dielectric layers above the substrate across the first circuit region and the second circuit region, the plurality of dielectric layers comprising:
a groove at least in part between the first edge and the second edge;
and
a support structure between the first edge and the second edge, the support structure having a side facing the groove;
a cover layer on the plurality of dielectric layers;
and
a conductive seed layer including a first portion on the support structure and a second portion on the cover layer, the first and second portions coupled to each other.

10 more elements

Dependencies are inferred from the claim text.

Scribe structure for memory device

Life of this patent

Scribe structure for memory device

Life of this patent

Abstract

Claims16