Semiconductor devices
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsPei-Wei Lee, Pang-Yen Tsai, Tsung-Yu Hung
Life of this patent
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Abstract
A semiconductor device includes a substrate and a semiconductor layer. The substrate includes a planar portion and a plurality of pillars on a periphery of the planar portion. The pillars are shaped as rectangular columns, and corners of two of the pillars at the same side of the planar portion are aligned in a horizontal direction or a direction perpendicular to the horizontal direction. The semiconductor layer is disposed over the planar portion and between the pillars.
Claims20
A semiconductor device, comprising:
- a substrate, comprising a planar portion and a plurality of pillar portions on a periphery of the planar portion, wherein the pillar portions are shaped as rectangular columns, and corners of two of the pillar portions at the same side of the planar portion are aligned in a horizontal direction or a direction perpendicular to the horizontal direction;
- and
- a semiconductor layer over the planar portion and between the pillar portions, wherein misfit defects of the semiconductor layer surrounded by the periphery are less than misfit defects of the semiconductor layer surrounded in the periphery.
A semiconductor device, comprising:
- a substrate including a main region and a periphery region surrounding the main region, the substrate comprising a planar portion and a plurality of pillar portions on the planar portion, wherein the pillar portions are shaped as rectangular columns;
- and
- a semiconductor layer over the planar portion and between the pillar portions, wherein a first imaginary connecting line is formed between corners of two of the pillar portions at the same side of the periphery region, and the semiconductor layer has at least one misfit defect along the first imaginary connecting line in the periphery region.
A semiconductor device, comprising:
- a substrate comprising a planar portion and a plurality of pillar portions on a periphery of the planar portion, wherein the pillar portions are shaped as rectangular columns, and the two closest pillar portions on opposite sides of the planar portion are offset from each other;
- a plurality of channel layers over the substrate and between the pillar portions;
- an isolation structure between the pillar portions and the channel layers;
- and
- a gate structure over the channel layers.
Dependencies are inferred from the claim text.