Redistribution substrate, method of fabricating the same, and semiconductor package including the same

A method of fabricating a redistribution substrate, the method comprising:

• forming a first conductive pattern;
• forming a first layer on the first conductive pattern;
• performing an exposure process on the first layer to form a first through hole exposing the first conductive pattern;
• filling a conductive material in the first through hole to form a first via;
• removing the first layer;
• forming a first dielectric layer that encapsulates the first conductive pattern and the first via;
• performing a grinding process on a top surface of the first dielectric layer until the top surface of the first dielectric layer is coplanar with a top surface of the first via to expose the top surface of the first via;
• forming a second conductive pattern on the top surface of the first via that is coplanar with the top surface of the first dielectric layer, and forming a second dielectric layer that covers the second conductive pattern.

A method of fabricating a redistribution substrate, the method comprising:

• forming a first conductive pattern on a substrate;
• forming a first photosensitive layer covering the first conductive pattern on the substrate;
• performing an exposure process on the first photosensitive layer to form a first through hole exposing the first conductive pattern;
• forming a first via in the first through hole;
• removing the first photosensitive layer;
• forming a first dielectric layer that encapsulates the first conductive pattern and the first via on the substrate,
• performing a grinding process on the first dielectric layer until a top surface of the first dielectric layer is coplanar with a top surface of the first via to expose the top surface of the first via;
• forming a second conductive pattern on the top surface of the first dielectric layer that is coplanar with the top surface of the first via, the second conductive pattern being connected with the first via,
• forming a second dielectric layer covering the second conductive pattern on the first dielectric layer;
• etching the second dielectric layer to form a second through hole that exposes the second conductive pattern;
• forming a second via filling the second through hole;
• and
• forming an under bump pad on the second dielectric layer.