Package substrate having integrated passive device(s) between leads

A semiconductor package, comprising:

• a multilayer package substrate comprising a top layer including top filled vias through a top dielectric layer and a top metal layer providing a top surface for a plurality of leads and a plurality of traces connected to the plurality of leads, and a bottom layer including bottom filled vias including contact pads through a bottom dielectric layer and a bottom metal layer;
• wherein the top filled vias are for connecting the bottom metal layer to the top metal layer, and wherein the bottom filled vias are for connecting the bottom layer to the contact pads;
• an integrated circuit (IC) die having a semiconductor surface including circuitry, with nodes in the circuitry electrically connected to bond pads, wherein the IC die is flipchip mounted onto the plurality of leads to provide an electrical connection to the bond pads;
• at least one passive device surface mounted by an electrically conductive material on the top metal layer electrically connected between at least one adjacent pair of the plurality of leads;
• and
• a mold compound for encapsulating at least the IC die and the passive device, wherein—
• the passive device comprises a first capacitor and a second capacitor;
• and
• the bottom metal layer includes a bridge portion together with a first and a second of the top filled vias on top positioned to electrically connect adjacent first and second traces of the plurality of traces to connect the first capacitor and second capacitor in series.