Semiconductor device having a through silicon via and methods of manufacturing the same

A semiconductor device, comprising:

• a first insulating interlayer disposed on a first surface of a substrate;
• a pad pattern disposed on a surface of the first insulating interlayer, the pad pattern comprising a first copper pattern, a first seed copper pattern and a first barrier pattern, and the first barrier pattern being exposed at an upper surface of the pad pattern;
• and
• a through silicon via extending from a second surface of the substrate that is a surface different from the first surface of the substrate, the through silicon via passing through the substrate and the first insulating interlayer, and contacting the first copper pattern of the pad pattern,
• wherein the through silicon via comprises a first portion passing through the substrate and the first insulating interlayer, and a second portion under the first portion and extending to an inner portion of the pad pattern,
• wherein a portion of a bottom of the first portion contacts the first barrier pattern of the upper surface of the pad pattern, and
• wherein an entire sidewall and a bottom of the second portion contact the first copper pattern, the first seed copper pattern and the first barrier pattern in the pad pattern.

A semiconductor device, comprising:

• circuit devices disposed on a first surface of a substrate;
• a first insulating interlayer covering the circuit devices disposed on the first surface of the substrate;
• a pad pattern disposed on a surface of the first insulating interlayer, the pad pattern comprising a first copper pattern, a first seed copper pattern and a first barrier pattern, the first seed copper pattern and the first barrier pattern covering the first copper pattern, and the first barrier pattern being exposed at an upper surface of the pad pattern;
• a second insulating interlayer covering the pad pattern disposed on the surface of the first insulating interlayer;
• and
• a through silicon via extending from a second surface of the substrate that is a surface different from the first surface of the substrate, the through silicon via passing through the substrate and the first insulating interlayer, and contacting the first copper pattern of the pad pattern,
• wherein the through silicon via comprises a first portion passing through the substrate and the first insulating interlayer, and a second portion under the first portion and extending to an inner portion of the pad pattern,
• wherein the through silicon via comprises a second barrier pattern, a second seed copper pattern, and a second copper pattern, and a stacked structure of the second barrier pattern and the second seed copper pattern covers a sidewall and a lower surface of the second copper pattern,
• wherein a portion of the second barrier pattern of a bottom of the first portion contacts the first barrier pattern of the upper surface of the pad pattern, and
• wherein an entire sidewall and a bottom of the second portion contact the pad pattern.