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US 11,600,551 B2Granted
Through-silicon via with low-K dielectric liner
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorMing-Fa Chen
Life of this patent
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Abstract
A semiconductor substrate having a through-silicon via with an air gap interposed between the through-silicon via and the semiconductor substrate is provided. An opening is formed partially through the semiconductor substrate. The opening is first lined with a first liner and then the opening is filled with a conductive material. A backside of the semiconductor substrate is thinned to expose the first liner, which is subsequently removed and a second liner formed with a low-k or extra low-k dielectric is formed in its place.
Claims20
A method comprising:
- forming a transistor over a first side of a substrate, a second side of the substrate being opposite the first side;
- forming a first dielectric layer over the transistor;
- forming an opening through the first dielectric layer and into the substrate;
- depositing a first dielectric liner into the opening;
- forming a conductive feature in the opening and over the first dielectric layer;
- removing a portion of the substrate on the second side to expose the first dielectric liner;
- removing at least a portion of the first dielectric liner, the removing the first dielectric liner forming an air gap interposed between the conductive feature and the first dielectric layer;
- and
- forming a second dielectric liner over the conductive feature and into the air gap.
6 more elements
A method comprising:
- forming an opening in a substrate;
- depositing a first dielectric liner in the opening and over and physically contacting a first side of the substrate;
- forming a through-via in the opening and over the first side of the substrate;
- forming a first dielectric layer over the through-via;
- removing a portion of the substrate on a second side of the substrate to expose the through-via, the second side being opposite the first side;
- etching at least a portion of the first dielectric liner to form an air gap between the through-via and the substrate;
- and
- forming a second dielectric liner over and around the through-via, the second dielectric liner interposing the through-via and the first side of the substrate, the second dielectric liner extending into the air gap.
5 more elements
A method comprising:
- forming a transistor on a first side of a semiconductor substrate;
- forming a first dielectric layer over the first side of the semiconductor substrate;
- forming a second dielectric layer over the first dielectric layer;
- forming a contact pad over the second dielectric layer;
- forming an opening in the second dielectric layer, the first dielectric layer, and the semiconductor substrate;
- forming a first dielectric liner over the contact pad, the second dielectric layer, and an exposed surface of the semiconductor substrate;
- forming a conductive feature over the first dielectric liner and the contact pad;
- removing at least a portion of the first dielectric liner to form a first air gap directly interposed between the conductive feature and the semiconductor substrate;
- and
- forming a second dielectric liner in the first air gap.
7 more elements
Dependencies are inferred from the claim text.