Source/drain structures and method of forming

A semiconductor device, comprising:

• a first semiconductor fin extending from a substrate;
• a first source/drain region extending from the first semiconductor fin;
• a second semiconductor fin extending from the substrate, the first semiconductor fin and the second semiconductor fin being separated by a first pitch;
• a second source/drain region extending from the second semiconductor fin, the second source/drain region being spaced apart from the first source/drain region;
• a first pair of spacers covering a sidewall of bottom portions of the first source/drain region and a second pair of spacers covering a sidewall of bottom portions of the second source/drain region, the first pair of spacers and the second pair of spacers having a first height;
• a third semiconductor fin and a fourth semiconductor fin extending from the substrate, the third semiconductor fin and the fourth semiconductor fin being separated by a second pitch, the first pitch being greater than the second pitch;
• a third source/drain region extending from the third semiconductor fin to the fourth semiconductor fin;
• and
• a third pair of spacers covering a sidewall of a first bottom portion of the third source/drain region and a fourth pair of spacers covering a sidewall of a second bottom portion of the third source/drain region, the third pair of spacers and the fourth pair of spacers having a second height, the second height being less than the first height.

A method of forming a semiconductor device, the method comprising:

• forming a spacer layer over a first pair of semiconductor fins and a second pair of semiconductor fins;
• etching a first portion of the spacer layer to form a plurality of first spacers along sidewalls of the first pair of semiconductor fins, the plurality of first spacers having a first height;
• recessing the first pair of semiconductor fins to form a first recess and a second recess;
• etching a second portion of the spacer layer to form a plurality of second spacers along sidewalls of the second pair of semiconductor fins, the plurality of second spacers having a second height greater than the first height;
• recessing the second pair of semiconductor fins to form a third recess and a fourth recess;
• and
• epitaxially growing a first source/drain region in the first recess and the second recess, a second source/drain region in the third recess, and a third source/drain region in the fourth recess, wherein the second source/drain region is spaced apart from the third source/drain region, wherein epitaxially growing the first source/drain region, the second source/drain region, and the third source/drain region are performed simultaneously.