US 11,600,528 B2 · Semiconductor structure and method for forming the same

Abstract

A method for forming a semiconductor structure is provided. The method includes forming a stack over a substrate. The stack includes alternating first semiconductor layers and second semiconductor layers. The method also includes forming a polishing stop layer over the stack and a dummy layer over the polishing stop layer, recessing the dummy layer, the polishing stop layer and the stack to form a recess, forming a third semiconductor layer to fill the recess, and planarizing the dummy layer and the third semiconductor layer until the polishing stop layer is exposed. The method also includes patterning the polishing stop layer and the stack into a first fin structure and the third semiconductor layer into a second fin structure, removing the second semiconductor layers of the first fin structure to form nanostructures, and forming a gate stack across the first fin structure and the second fin structure.

Claims20

Dependent claims

A method for forming a semiconductor structure, comprising:

forming a stack over a substrate, the stack including alternating first semiconductor layers and second semiconductor layers;
forming a polishing stop layer over the stack and a dummy layer over the polishing stop layer;
recessing the dummy layer, the polishing stop layer, and the stack to form a recess;
forming a third semiconductor layer to fill the recess;
planarizing the dummy layer and the third semiconductor layer until the polishing stop layer is exposed;
patterning the polishing stop layer and the stack into a first fin structure and the third semiconductor layer into a second fin structure;
removing the first semiconductor layers of the first fin structure to form nanostructures;
and
forming a gate stack across the nanostructures and the second fin structure.

6 more elements

A method for forming the semiconductor structure, comprising:

forming a first fin structure and a second fin structure over a substrate, the first fin structure including a first silicon germanium layer, a silicon layer and a second silicon germanium layer sequentially stacked;
forming an insulating material to surround the first fin structure and the second fin structure;
removing the second silicon germanium layer of the first fin structure, thereby exposing an upper surface of the silicon layer of the first fin structure;
recessing the insulating material;
etching the first fin structure and the second fin structure to form a first source/drain recess and a second source/drain recess respectively;
and
forming a first source/drain feature from the first source/drain recess and a second source/drain feature from the second source/drain recess, wherein an upper surface of the first source/drain feature is located below an upper surface of the second source/drain feature.

4 more elements

A method for forming the semiconductor structure, comprising:

forming a stack in which a first semiconductor layer, a second semiconductor layer, a third semiconductor layer and a fourth semiconductor layer sequentially stacking over a substrate;
forming a fifth semiconductor layer adjacent to the stack, wherein the fifth semiconductor layer is in direct contact with sidewalls of the first semiconductor layer, the second semiconductor layer, the third semiconductor layer and the fourth semiconductor layer of the stack;
removing the fourth semiconductor layer of the stack and a portion of the fifth semiconductor layer;
etching the stack and the fifth semiconductor layer to form a first fin structure and a second fin structure, respectively;
removing the third semiconductor layer of the first fin structure to expose the second semiconductor layer of the first fin structure;
and
forming a dummy gate dielectric layer over the first fin structure and the second fin structure;
and
forming a dummy gate electrode layer over the dummy gate dielectric layer.

6 more elements

Dependencies are inferred from the claim text.

Semiconductor structure and method for forming the same

Life of this patent

Semiconductor structure and method for forming the same

Life of this patent

Abstract

Claims20