Chip package based on through-silicon-via connector and silicon interconnection bridge

A method for fabricating a through-silicon-via (TSV) connector comprising:

• providing a semiconductor wafer with a silicon substrate, wherein the semiconductor wafer has a frontside and a backside opposite to the frontside thereof;
• forming, at the frontside of the semiconductor wafer, a plurality of holes in the silicon substrate of the semiconductor wafer;
• forming a first insulating layer at a sidewall and bottom of each of the plurality of holes;
• forming a first metal layer over the semiconductor wafer, on the first insulating layer and in each of the plurality of holes;
• forming a second metal layer over the semiconductor wafer, on the first metal layer and in each of the plurality of holes;
• removing, by a polishing process, the first and second metal layers outside each of the plurality of holes to leave the first and second metal layers in and vertically aligned with each of the plurality of holes and expose a frontside surface of the second metal layer in and vertically aligned with each of the plurality of holes;
• forming a plurality of metal contacts each on the frontside surface of the second metal layer in and vertically aligned with at least one of the plurality of holes;
• grinding a backside of the silicon substrate of the semiconductor wafer to expose a backside surface of the second metal layer in and through each of the plurality of holes;
• and
• after said grinding the backside of the silicon substrate of the semiconductor wafer and while the backside surface of the second metal layer in and through each of the plurality of holes is still exposed, cutting the semiconductor wafer to form the through-silicon-via (TSV) connector in a separated unit, wherein in the through-silicon-via (TSV) connector, a first metal contact of the plurality of metal contacts couples to the backside surface of the second metal layer in and through a first hole of the plurality of holes through the second metal layer in and through the first hole, and the backside surface of the second metal layer in and through the first hole is exposed.