Semiconductor device and method of fabricating the same

A method of fabricating semiconductor device comprising:

• forming a plurality of fins extending lengthwise in a first direction and spaced apart from each other in a second direction different from the first direction;
• forming a field insulation layer in a space between two fins, adjacent to each other, of the plurality of fins;
• forming a ghost fin between the two fins, adjacent to each other, of the plurality of fins by removing portions of the plurality of fins and the field insulation layer;
• forming a fin cut trench by removing a portion of the field insulation layer;
• forming a blocking liner conforming to a bottom surface and a sidewall of the fin cut trench;
• and
• forming a fin cut trench insulation layer on the blocking liner in the fin cut trench,
• wherein a bottom surface of the fin cut trench is lower than a bottom surface of the field insulation layer.

A method of fabricating semiconductor device comprising:

• forming a substrate having a fin remnant protruding therefrom, extending lengthwise in a first direction and having opposite first and second sidewalls;
• forming a first field insulation layer contacting a first sidewall of the fin remnant;
• forming a second field insulation layer on the substrate and spaced apart from the first field insulation layer;
• forming a trench bounded by the second sidewall of the fin remnant, a sidewall of the first field insulation layer and a sidewall of the second field insulation layer, the trench extending into the substrate to a depth below a lower surface of the first field insulation layer and the second field insulation layer;
• and
• forming a blocking liner conforming to a bottom surface and inner sidewalls of the trench,
• wherein a trench insulation layer is disposed on the blocking liner in the trench and has an upper surface lower than an upper surface of the first field insulation layer.