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US 11,600,517 B2Granted
Screwless semiconductor processing chambers
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsBo-Ru Chen, Yan-Hong Liu, Che-Fu Chen
Life of this patent
Estimating the term…
Abstract
In an embodiment, a system includes: a gas distributor assembly configured to dispense gas into a chamber; and a chuck assembly configured to secure a wafer within the chamber, wherein at least one of the gas distributor assembly and the chuck assembly includes: a first portion comprising a convex protrusion, and a second portion comprising a concave opening, wherein the convex protrusion is configured to engage the concave opening.
Claims20
A system, comprising:
- a gas distributor assembly configured to dispense gas into a chamber;
- a chuck assembly configured to secure a wafer within the chamber, wherein the chuck assembly comprises:
- a first portion comprising a convex protrusion, and
- a second portion comprising a concave opening, wherein the convex protrusion is configured to engage the concave opening;
- a first power supply coupled to the first portion and configured to induce an electrostatic field between the wafer and the first portion;
- and
- a second power supply coupled to the second portion and configured to control reaction speed of a plasma when the plasma is generated in the chamber.
4 more elements
A system, comprising:
- a gas distributor assembly configured to dispense gas into a chamber, wherein the gas distributor assembly comprises:
- a first gas distributor portion comprising a first convex protrusion, and
- a second gas distributor portion comprising a first concave opening, wherein the convex protrusion is configured to engage the concave opening;
- a chuck assembly configured to secure a wafer within the chamber, wherein the chuck assembly is underneath the gas distributor assembly, wherein the chuck assembly comprises:
- a first portion configured to hold a wafer thereon, the first portion comprising a second convex protrusion, and
- a second portion disposed under the first portion, the second portion comprising a second concave opening, wherein the second convex protrusion is configured to engage the second concave opening;
- a first power supply coupled to the first portion and configured to induce an electrostatic field between the wafer and the first portion;
- and
- a second power supply coupled to the second portion and configured to control reaction speed of a plasma when the plasma is generated in the chamber.
6 more elements
A system, comprising:
- a gas distributor assembly configured to dispense gas into a chamber, wherein the gas distributor assembly comprises:
- a first gas distributor portion comprising a convex protrusion, and
- a second gas distributor portion comprising a concave opening, wherein the convex protrusion is configured to engage the concave opening;
- a chuck assembly configured to secure a wafer within the chamber, wherein the chuck assembly comprised comprises:
- a first portion comprising a convex protrusion, and
- a second portion comprising a concave opening, wherein the convex protrusion is configured to engage the concave opening;
- a first power supply coupled to the first portion and configured to induce an electrostatic field between the wafer and the first portion;
- and
- a second power supply coupled to the second portion and configured to control reaction speed of a plasma when the plasma is generated in the chamber.
6 more elements
Dependencies are inferred from the claim text.